Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
20
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
14.4
Maximum Drain-Source Resistance (mOhm)
6.32@10V
Typical Gate Charge @ Vgs (nC)
48@10V
Typical Gate Charge @ 10V (nC)
48
Typical Input Capacitance @ Vds (pF)
3600@75V
Maximum Power Dissipation (mW)
3000
Typical Fall Time (ns)
4
Typical Rise Time (ns)
5
Typical Turn-Off Delay Time (ns)
14
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Surface Mount
Package Height
0.7(Max)
Package Width
6
Package Length
5
PCB changed
8
Supplier Package
WHSON EP
Pin Count
8
Cantidad de Pedido