MOSFET

IPC50N04S5L5R5ATMA1

Trans MOSFET N-CH 40V 50A 8-Pin TDSON EP T/R Automotive AEC-Q101

Infineon Technologies AG

Especificaciones técnicas del producto

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.40

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Process Technology

  200nm

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±16

• Maximum Gate Threshold Voltage (V)

  2

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  50

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  5.5@10V

• Typical Gate Charge @ Vgs (nC)

  17@10V

• Typical Gate Charge @ 10V (nC)

  17

• Typical Input Capacitance @ Vds (pF)

  930@25V

• Minimum Gate Threshold Voltage (V)

  1.2

• Typical Output Capacitance (pF)

  210

• Maximum Power Dissipation (mW)

  42000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  2

• Typical Turn-Off Delay Time (ns)

  8

• Typical Turn-On Delay Time (ns)

  2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  4.4@10V|5.7@4.5V

• Maximum Positive Gate-Source Voltage (V)

  16

• Maximum Pulsed Drain Current @ TC=25°C (A)

  200

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  50

• Maximum Diode Forward Voltage (V)

  1.1

• Mounting

  Surface Mount

• Package Height

  1

• Package Width

  5.48

• Package Length

  5.15

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  TDSON EP

• Pin Count

  8