Chips IGBT

IKW40N65ET7XKSA1

Trans IGBT Chip N-CH 650V 76A 230.8W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Technology

  Trench Stop 7

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.35

• Maximum Continuous DC Collector Current (A)

  76

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  230.8

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Mounting

  Through Hole

• Package Height

  21.5(Max)

• Package Width

  5.3(Max)

• Package Length

  16.3(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3