Especificaciones técnicas del producto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
GaN
Configuration
Single Octal Drain Seven Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
-10(Min)
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
48
Maximum Drain-Source Resistance (mOhm)
42
Typical Gate Charge @ Vgs (nC)
7.7@3V
Typical Input Capacitance @ Vds (pF)
540@400V
Maximum Power Dissipation (mW)
154000
Typical Fall Time (ns)
11
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
15
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
2.3
Package Width
10.1
Package Length
9.9
PCB changed
16
Standard Package Name
SO
Supplier Package
HDSOP EP
Pin Count
16
Cantidad de Pedido