Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.10.00.80
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
3300
Maximum Gate-Source Voltage (V)
20
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
72
Maximum Drain-Source Resistance (mOhm)
50(Typ)@20V
Typical Gate Charge @ Vgs (nC)
340@20V
Typical Input Capacitance @ Vds (pF)
7302@1000V
Maximum Power Dissipation (mW)
519000
Typical Fall Time (ns)
18
Typical Rise Time (ns)
36
Typical Turn-Off Delay Time (ns)
32
Typical Turn-On Delay Time (ns)
74
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
23.6(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
4
Tab
Tab
Supplier Package
TO-247
Pin Count
4
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