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FDD86369F085|ONSEMI|simage
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MOSFETs

FDD86369-F085

Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

onsemi
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    90
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    7.9@10V
  • Typical Gate Charge @ Vgs (nC)
    36@10V
  • Typical Gate Charge @ 10V (nC)
    36
  • Typical Input Capacitance @ Vds (pF)
    2530@40V
  • Maximum Power Dissipation (mW)
    150000
  • Typical Fall Time (ns)
    9
  • Typical Rise Time (ns)
    34
  • Typical Turn-Off Delay Time (ns)
    22
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.29
  • Package Width
    6.1
  • Package Length
    6.54
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentación y Recursos

Hojas de datos
Recursos de diseño