MOSFET
BSS308PEH6327XTSA1
Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R Automotive AEC-Q101
Infineon Technologies AGEspecificaciones técnicas del producto
유럽 연합 RoHS 명령어
Compliant
미국수출통제분류ECCN 인코딩
EAR99
친환경 무연
Active
미국 세관 상품 코드
COMPONENTS
Automotive
Yes
PPAP
Unknown
Category
Small Signal
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
2
Maximum Gate-Source Leakage Current (nA)
5000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
80@10V
Typical Gate Charge @ Vgs (nC)
5@10V
Typical Gate Charge @ 10V (nC)
5
Typical Gate to Drain Charge (nC)
0.6
Typical Gate to Source Charge (nC)
1.2
Typical Reverse Recovery Charge (nC)
5.9
Typical Input Capacitance @ Vds (pF)
376@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
12@15V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
196
Maximum Power Dissipation (mW)
500
Typical Fall Time (ns)
2.8
Typical Rise Time (ns)
7.7
Typical Turn-Off Delay Time (ns)
15.3
Typical Turn-On Delay Time (ns)
5.6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
62@10V|88@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.5
Maximum Pulsed Drain Current @ TC=25°C (A)
8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
250
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
3.1
Typical Reverse Recovery Time (ns)
14
Maximum Diode Forward Voltage (V)
1.1
Typical Gate Threshold Voltage (V)
1.5
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
1(Max)
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing