MOSFETs

BSS169H6327XTSA1

Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R Automotive AEC-Q101

Infineon Technologies AG

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• Estatus de pieza

  Active

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Small Signal

• Configuration

  Single

• Channel Mode

  Depletion

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  1.8

• Maximum Continuous Drain Current (A)

  0.17

• Maximum Drain-Source Resistance (mOhm)

  12000@0V

• Typical Gate Charge @ Vgs (nC)

  2.1@7V

• Typical Gate to Drain Charge (nC)

  0.9

• Typical Gate to Source Charge (nC)

  0.12

• Typical Reverse Recovery Charge (nC)

  9.7

• Typical Input Capacitance @ Vds (pF)

  51@25V

• Typical Output Capacitance (pF)

  9

• Maximum Power Dissipation (mW)

  360

• Typical Fall Time (ns)

  27

• Typical Rise Time (ns)

  2.7

• Typical Turn-Off Delay Time (ns)

  11

• Typical Turn-On Delay Time (ns)

  2.9

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  2900@10V|5300@0V