Especificaciones técnicas del producto
EU RoHS
Compliant
Part Status
Active
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.8um to 3um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
50
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.2
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
0.5
Maximum Drain-Source Resistance (mOhm)
3500@5V
Typical Input Capacitance @ Vds (pF)
40@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
3.5@25V
Minimum Gate Threshold Voltage (V)
0.85
Typical Output Capacitance (pF)
12
Maximum Power Dissipation (mW)
225
Typical Turn-Off Delay Time (ns)
20(Max)
Typical Turn-On Delay Time (ns)
20(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.8
Typical Gate Plateau Voltage (V)
1.9
Cantidad de Pedido