Especificaciones técnicas del producto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
COMPONENTS
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
150
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
50
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
19@10V
Typical Gate Charge @ Vgs (nC)
23@10V
Typical Gate Charge @ 10V (nC)
23
Typical Gate to Drain Charge (nC)
4
Typical Gate to Source Charge (nC)
10
Typical Reverse Recovery Charge (nC)
385
Typical Switch Charge (nC)
9
Typical Input Capacitance @ Vds (pF)
1820@75V
Typical Reverse Transfer Capacitance @ Vds (pF)
5@75V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
214
Maximum Power Dissipation (mW)
125000
Typical Fall Time (ns)
6
Typical Rise Time (ns)
53
Typical Turn-Off Delay Time (ns)
25
Typical Turn-On Delay Time (ns)
15
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
16@8V|16@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
50
Typical Diode Forward Voltage (V)
1
Typical Gate Plateau Voltage (V)
5.7
Typical Reverse Recovery Time (ns)
130
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
1
Package Width
5.9
Package Length
5.15
PCB changed
8
Standard Package Name
SON
Supplier Package
TDSON EP
Pin Count
8
Lead Shape
No Lead
Cantidad de Pedido