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BLF888A112|AMPLEON|simage
BLF888A112|AMPLEON|limage
RF FET

BLF888A,112

Trans RF MOSFET N-CH 110V 5-Pin SOT-539A

Ampleon
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Especificaciones técnicas del producto
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active-Unconfirmed
  • HTS
    8541.29.00.55
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Configuration
    Dual Common Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    2-Tone Class-AB|DVB-T|Pulsed RF Class-AB
  • Process Technology
    0.14um
  • Maximum Drain-Source Voltage (V)
    110
  • Maximum Gate-Source Voltage (V)
    11
  • Maximum VSWR
    10
  • Maximum Drain-Source Resistance (mOhm)
    143(Typ)@6.15V
  • Typical Input Capacitance @ Vds (pF)
    220@50V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    1.2@50V
  • Typical Output Capacitance @ Vds (pF)
    74@50V
  • Maximum Output Power (W)
    250(Min)
  • Typical Power Gain (dB)
    21
  • Maximum Frequency (MHz)
    860
  • Minimum Frequency (MHz)
    470
  • Typical Drain Efficiency (%)
    46
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Bulk
  • Mounting
    Screw
  • Package Height
    4.7(Max)
  • Package Width
    10.29(Max)
  • Package Length
    41.28(Max)
  • PCB changed
    5
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-539A
  • Pin Count
    5

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Documentación y Recursos

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Recursos de diseño