RF MOSFETs

BLF647P,112

Trans RF MOSFET N-CH 65V 5-Pin CDFM Bulk

Ampleon

Especificaciones técnicas del producto

• 欧盟RoHS指令

  Compliant

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.75

• Configuration

  Dual Common Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Mode of Operation

  Pulsed RF Class-AB|CW Class-B|2-Tone Class-AB

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  65

• Maximum Gate-Source Voltage (V)

  11

• Maximum Gate Threshold Voltage (V)

  2.4

• Maximum VSWR

  10

• Maximum Gate-Source Leakage Current (nA)

  50

• Maximum IDSS (uA)

  1.4

• Maximum Drain-Source Resistance (mOhm)

  140(Typ)@6.15V

• Typical Input Capacitance @ Vds (pF)

  78@32V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  1.3@32V

• Typical Output Capacitance @ Vds (pF)

  30@32V

• Maximum Output Power (W)

  200(Typ)

• Typical Power Gain (dB)

  18

• Maximum Frequency (MHz)

  1500

• Minimum Frequency (MHz)

  10

• Typical Drain Efficiency (%)

  70

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Bulk

• Mounting

  Screw

• Package Height

  4.75(Max)

• Package Width

  9.91(Max)

• Package Length

  34.16(Max)

• PCB changed

  5

• Supplier Package

  CDFM

• Pin Count

  5