Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
12
Maximum Gate-Source Voltage (V)
±8
Maximum Gate Threshold Voltage (V)
0.9
Maximum Continuous Drain Current (A)
8
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
21@4.5V
Typical Gate Charge @ Vgs (nC)
12.7@4.5V
Typical Input Capacitance @ Vds (pF)
1370@6V
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
41.5
Typical Rise Time (ns)
25
Typical Turn-Off Delay Time (ns)
70
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
16.5@4.5V|21.5@2.5V|30@1.8V|36@1.5V
Mounting
Surface Mount
Package Height
0.55(Max) mm
Package Width
2 mm
Package Length
2 mm
PCB changed
6
Standard Package Name
DFN
Supplier Package
DFN-B EP
Pin Count
6