Chips DRAM

W979H6KBVX2E

DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 32Mx16 1.2V/1.8V 134-Pin VFBGA

Winbond Electronics

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  LTB

• Código HTS

  8542.32.00.28

• Automotive

  No

• PPAP

  No

• DRAM Type

  Mobile LPDDR2 SDRAM

• Chip Density (bit)

  512M

• Organization

  32Mx16

• Number of Internal Banks

  4

• Number of Words per Bank

  8M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  400

• Maximum Access Time (ns)

  5.5

• Address Bus Width (bit)

  15

• Interface Type

  HSUL_12

• Minimum Operating Supply Voltage (V)

  1.14|1.7

• Maximum Operating Supply Voltage (V)

  1.3|1.95

• Operating Current (mA)

  175

• Minimum Operating Temperature (°C)

  -25

• Maximum Operating Temperature (°C)

  85

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  0.58

• Package Width

  10

• Package Length

  11.5

• PCB changed

  134

• Standard Package Name

  BGA

• Supplier Package

  VFBGA

• Pin Count

  134