Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
9.2
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
19.5@10V
Typical Gate Charge @ Vgs (nC)
38@4.5V|76@10V
Typical Gate Charge @ 10V (nC)
76
Typical Gate to Drain Charge (nC)
19
Typical Gate to Source Charge (nC)
16
Typical Reverse Recovery Charge (nC)
59
Typical Input Capacitance @ Vds (pF)
3500@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
290@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
390
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
40
Typical Rise Time (ns)
7
Typical Turn-Off Delay Time (ns)
70
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
16@10V|20@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.1
Maximum Pulsed Drain Current @ TC=25°C (A)
150
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
40
Typical Diode Forward Voltage (V)
1
Typical Gate Plateau Voltage (V)
4
Typical Reverse Recovery Time (ns)
45
Maximum Diode Forward Voltage (V)
1.5
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
9.2
Mounting
Through Hole
Package Height
9.01(Max)
Package Width
4.65(Max)
Package Length
10.51(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole