STMicroelectronicsSTGD3NB60SDT4Chip IGBT
Trans IGBT Chip N-CH 600V 6A 48W Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8504.40.60.18 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.2 | |
| 6 | |
| 0.1 | |
| 48 | |
| -65 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.4(Max) mm |
| Package Width | 6.2(Max) mm |
| Package Length | 6.6(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
You won't need to worry about any lagging in your circuit with this STGD3NB60SDT4 IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 48000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |
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