Controladores de energía y compuertas
SI82E29AEC-IS1R
3.75 kV 2-channel isolated Value gate driver
Skyworks SolutionsThe new Si82Ex family are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven. With outstanding isolation ratings of up to 6kV and compliance to VDE 60747-17, AEC-Q100 qualifications and automotive-grade options, and a variety of popular packaging options, this device family has a match for your isolated gate drive needs.
Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
EA
Automotive
Yes
PPAP
No
Driver Type
High Side|Low Side
Driver Configuration
Non-Inverting
Bridge Type
Half Bridge
Number of Drivers
2
High and Low Sides Dependency
Independent
Type
GaNFET|IGBT|MOSFET|SiCFET
Number of Outputs
2
Maximum Rise Time (ns)
8.3(Typ)
Maximum Fall Time (ns)
8.6(Typ)
Maximum Propagation Delay Time (ns)
30(Typ)
Input Logic Compatibility
CMOS
Minimum Operating Supply Voltage (V)
5
Maximum Operating Supply Voltage (V)
30
Maximum Supply Current (mA)
2.04(Typ)
Typical Input Low Threshold Voltage (V)
7.5(Max)
Typical Input High Threshold Voltage (V)
3.75(Min)
Peak Output Current (A)
7.5(Typ)
Output Resistance (Ohm)
0.7|1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Automotive
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
3.9
Package Length
9.9
PCB changed
16
Standard Package Name
SO
Supplier Package
SOIC N
Pin Count
16