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SI7141DPT1GE3|VISHAY|limage
SI7141DPT1GE3|VISHAY|simage
MOSFETs

SI7141DP-T1-GE3

Trans MOSFET P-CH 20V 42.7A 8-Pin PowerPAK SO EP T/R

Vishay
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    COMPONENTS
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    42.7
  • Maximum Drain-Source Resistance (mOhm)
    1.9@10V
  • Typical Gate Charge @ Vgs (nC)
    128@4.5V|265@10V
  • Typical Gate Charge @ 10V (nC)
    265
  • Typical Input Capacitance @ Vds (pF)
    14300@10V
  • Maximum Power Dissipation (mW)
    6250
  • Typical Fall Time (ns)
    55
  • Typical Rise Time (ns)
    120
  • Typical Turn-Off Delay Time (ns)
    100
  • Typical Turn-On Delay Time (ns)
    130
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.07(Max)
  • Package Width
    5.89
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    PowerPAK SO EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentación y Recursos

Hojas de datos
Recursos de diseño