Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
2.4
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
120@10V
Typical Gate Charge @ Vgs (nC)
14.5@10V
Typical Gate Charge @ 10V (nC)
14.5
Typical Gate to Drain Charge (nC)
3.7
Typical Gate to Source Charge (nC)
2.2
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
60
Maximum Power Dissipation (mW)
2400
Typical Fall Time (ns)
35
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
50
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
100@10V|126@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.4
Maximum Pulsed Drain Current @ TC=25°C (A)
25
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
110
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
3.1
Typical Reverse Recovery Time (ns)
30
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
3.1
Mounting
Surface Mount
Package Height
1.55(Max)
Package Width
4(Max)
Package Length
5(Max)
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC N
Pin Count
8
Lead Shape
Gull-wing