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SI4497DYT1GE3|VISHAY|simage
SI4497DYT1GE3|VISHAY|limage
MOSFETs

SI4497DY-T1-GE3

Trans MOSFET P-CH 30V 36A 8-Pin SOIC N T/R

Vishay
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant with Exemption
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • SVHC
    Yes
  • Índice de SEP por encima del límite autorizado
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    36
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    3.3@10V
  • Typical Gate Charge @ Vgs (nC)
    90@4.5V|190@10V
  • Typical Gate Charge @ 10V (nC)
    190
  • Typical Gate to Drain Charge (nC)
    26.5
  • Typical Gate to Source Charge (nC)
    27.5
  • Typical Reverse Recovery Charge (nC)
    23
  • Typical Input Capacitance @ Vds (pF)
    9685@15V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    995@15V
  • Minimum Gate Threshold Voltage (V)
    1
  • Typical Output Capacitance (pF)
    995
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    25|42
  • Typical Rise Time (ns)
    13|75
  • Typical Turn-Off Delay Time (ns)
    115|100
  • Typical Turn-On Delay Time (ns)
    19|100
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    2.7@10V|3.8@4.5V
  • Maximum Power Dissipation on PCB @ TC=25°C (W)
    3.5
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    70
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    80
  • Typical Diode Forward Voltage (V)
    0.7
  • Typical Gate Plateau Voltage (V)
    2.7
  • Typical Reverse Recovery Time (ns)
    31
  • Maximum Diode Forward Voltage (V)
    1.2
  • Minimum Gate Resistance (Ohm)
    0.5
  • Maximum Gate Resistance (Ohm)
    4.6
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A)
    24.8
  • Mounting
    Surface Mount
  • Package Height
    1.38
  • Package Width
    3.9
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC N
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentación y Recursos

Hojas de datos
Recursos de diseño