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SI2306BDST1GE3|VISHAY|simage
SI2306BDST1GE3|VISHAY|limage
MOSFETs

SI2306BDS-T1-GE3

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

Vishay
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    NRND
  • Código HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    3.16
  • Maximum Drain-Source Resistance (mOhm)
    47@10V
  • Typical Gate Charge @ Vgs (nC)
    3@5V
  • Typical Gate Charge @ 10V (nC)
    6
  • Typical Input Capacitance @ Vds (pF)
    305@15V
  • Maximum Power Dissipation (mW)
    1250
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentación y Recursos

Hojas de datos
Recursos de diseño