Chips IGBT

NGTB40N120FL2WG

Trans IGBT Chip N-CH 1200V 80A 535W 3-Pin(3+Tab) TO-247 Tube

onsemi

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  NGTB40N120FL2WG

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop II|Trench

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  1200

• Typical Collector-Emitter Saturation Voltage (V)

  2

• Maximum Continuous DC Collector Current (A)

  80

• Maximum Gate Emitter Leakage Current (uA)

  0.2

• Maximum Power Dissipation (mW)

  535

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  21 mm

• Package Width

  5 mm

• Package Length

  16 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole