Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
3B992
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Configuration
Dual Common Source
Type
MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Mode of Operation
CW
Maximum Drain-Source Voltage (V)
179
Maximum Gate-Source Voltage (V)
10
Maximum VSWR
65
Typical Input Capacitance @ Vds (pF)
760@65V
Typical Reverse Transfer Capacitance @ Vds (pF)
2.9@65V
Typical Output Capacitance @ Vds (pF)
203@65V
Typical Forward Transconductance (S)
44.7
Maximum Power Dissipation (mW)
2247000
Maximum Output Power (W)
1800(Typ)
Typical Power Gain (dB)
27.8
Maximum Frequency (MHz)
400
Minimum Frequency (MHz)
1.8
Typical Drain Efficiency (%)
75.6
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Mounting
Screw
Package Height
4.83(Max)
Package Width
10.29(Max)
Package Length
41.28(Max)
PCB changed
5
Supplier Package
NI-1230H
Pin Count
5