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K4B4G1646DBCK0000|SAMSUNG|simage
K4B4G1646DBCK0000|SAMSUNG|limage
Chips DRAM

K4B4G1646D-BCK0000

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 90-Pin FBGA

Samsung Electronics
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Obsolete
  • Código HTS
    8542.32.00.36
  • Automotive
    No
  • PPAP
    No
  • DRAM Type
    DDR3 SDRAM
  • Chip Density (bit)
    4G
  • Organization
    256Mx16
  • Number of Internal Banks
    8
  • Number of Words per Bank
    32M
  • Number of Bits/Word (bit)
    16
  • Data Bus Width (bit)
    16
  • Maximum Clock Rate (MHz)
    1600
  • Maximum Access Time (ns)
    0.225
  • Address Bus Width (bit)
    18
  • Interface Type
    SSTL_1.5
  • Minimum Operating Supply Voltage (V)
    1.425
  • Maximum Operating Supply Voltage (V)
    1.575
  • Operating Current (mA)
    118
  • Minimum Operating Temperature (°C)
    0
  • Maximum Operating Temperature (°C)
    95
  • Supplier Temperature Grade
    Commercial
  • Number of I/O Lines (bit)
    16
  • Mounting
    Surface Mount
  • Package Width
    7.5
  • Package Length
    13.3
  • PCB changed
    90
  • Standard Package Name
    BGA
  • Supplier Package
    FBGA
  • Pin Count
    90
  • Lead Shape
    Ball

Documentación y Recursos

Hojas de datos
Recursos de diseño