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JAN2N4931|MICROSEM|simage
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GP BJT

JAN2N4931

Trans GP BJT PNP 250V 0.2A 1000mW 3-Pin TO-39 Bag

Microchip Technology
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Not Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.10.00.80
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    250
  • Maximum Collector-Emitter Voltage (V)
    250
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Base-Emitter Saturation Voltage (V)
    1@1mA@10mA|1.2@3mA@30mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    1@1mA@10mA|1.2@3mA@30mA
  • Maximum DC Collector Current (A)
    0.2
  • Minimum DC Current Gain
    30@0.1mA@10V|40@1mA@10V|40@10mA@10V|50@30mA@10V|30@50mA@20V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Bag
  • Supplier Temperature Grade
    Military
  • Diameter
    9.4(Max) mm
  • Mounting
    Through Hole
  • Package Height
    6.6(Max) mm
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentación y Recursos

Hojas de datos
Recursos de diseño