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IXZR16N60A00|IXYS|simage
IXZR16N60A00|IXYS|limage
RF MOSFETs

IXZR16N60A-00

Trans RF MOSFET N-CH 600V 18A 3-Pin(3+Tab) ISOPLUS 247

IXYS
Hojas de datos 

Especificaciones técnicas del producto
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Obsolete
  • Código HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Type
    MOSFET
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    18
  • Maximum Drain-Source Resistance (mOhm)
    530(Typ)@20V
  • Typical Gate Charge @ Vgs (nC)
    42@10V
  • Typical Input Capacitance @ Vds (pF)
    2040@480V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    20@480V
  • Typical Output Capacitance @ Vds (pF)
    160@480V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Turn-Off Delay Time (ns)
    4
  • Typical Turn-On Delay Time (ns)
    4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Through Hole
  • Package Height
    21.34(Max)
  • Package Width
    5.21(Max)
  • Package Length
    16.13(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    SO
  • Supplier Package
    ISOPLUS 247
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentación y Recursos

Hojas de datos
Recursos de diseño