Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.95
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quint Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.7
Maximum Continuous Drain Current (A)
255
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.95@10V
Typical Gate Charge @ Vgs (nC)
200@10V
Typical Gate Charge @ 10V (nC)
200
Typical Input Capacitance @ Vds (pF)
9990@25V
Maximum Power Dissipation (mW)
290000
Typical Fall Time (ns)
86
Typical Rise Time (ns)
120
Typical Turn-Off Delay Time (ns)
195
Typical Turn-On Delay Time (ns)
140
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1.6@10V|2@6V
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.67(Max)
PCB changed
6
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
7