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MOSFET

IRFR320PBF-BE3

Trans MOSFET N-CH 400V 3.1A 3-Pin(2+Tab) DPAK

Vishay
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    400
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    3.1
  • Maximum Drain-Source Resistance (mOhm)
    1800@10V
  • Typical Gate Charge @ Vgs (nC)
    20(Max)@10V
  • Typical Input Capacitance @ Vds (pF)
    350@25V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    14
  • Typical Turn-Off Delay Time (ns)
    30
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    2.38(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Supplier Package
    DPAK
  • Pin Count
    3

Documentación y Recursos

Hojas de datos
Recursos de diseño