Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
250
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
0.63
Maximum Drain-Source Resistance (mOhm)
1100@10V
Typical Gate Charge @ Vgs (nC)
14(Max)@10V
Typical Gate Charge @ 10V (nC)
14(Max)
Typical Input Capacitance @ Vds (pF)
260@25V
Maximum Power Dissipation (mW)
1000
Typical Fall Time (ns)
12
Typical Rise Time (ns)
13
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
3.37(Max)
Package Width
6.29(Max)
Package Length
5(Max)
PCB changed
4
Standard Package Name
DIP
Supplier Package
HVMDIP
Pin Count
4
Lead Shape
Through Hole