MOSFETs

IPP60R280P6XKSA1

Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube

Infineon Technologies AG

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  LTB

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  13.8

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  280@10V

• Typical Gate Charge @ Vgs (nC)

  25.5@10V

• Typical Gate Charge @ 10V (nC)

  25.5

• Typical Input Capacitance @ Vds (pF)

  1190@100V

• Maximum Power Dissipation (mW)

  104000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  6

• Typical Turn-Off Delay Time (ns)

  36

• Typical Turn-On Delay Time (ns)

  12

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  252@10V

• Mounting

  Through Hole

• Package Height

  9.45(Max) mm

• Package Width

  4.57(Max) mm

• Package Length

  10.36(Max) mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220

• Pin Count

  3