Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.95
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
80
Maximum Drain-Source Resistance (mOhm)
5.7@10V
Typical Gate Charge @ Vgs (nC)
52@10V
Typical Gate Charge @ 10V (nC)
52
Typical Input Capacitance @ Vds (pF)
3570@40V
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
10
Typical Rise Time (ns)
66
Typical Turn-Off Delay Time (ns)
38
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
4.9@10V|6.3@6V
Mounting
Through Hole
Package Height
9.45(Max) mm
Package Width
4.57(Max) mm
Package Length
10.36(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3