MOSFETs
IPD90N04S402ATMA1
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Infineon Technologies AGEspecificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
90
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
2.4@10V
Typical Gate Charge @ Vgs (nC)
91@10V
Typical Gate Charge @ 10V (nC)
91
Typical Input Capacitance @ Vds (pF)
7250@25V
Maximum Power Dissipation (mW)
150000
Typical Fall Time (ns)
23
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
27
Typical Turn-On Delay Time (ns)
23
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
2@10V
Mounting
Surface Mount
Package Height
2.3 mm
Package Width
6.22 mm
Package Length
6.5 mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3