IMBG120R030M1HXTMA1
IMBG120R030M1HXTMA1 | CoolSiC™ MOSFETs 1200V in D2PAK-7L package - achieve top efficiency and enable passive cooling in servo drives, chargers and industrial power supplies.
Infineon Technologies AGInfineon presents CoolSiCTM MOSFET 1200 V class in a new D2PAK-7L package. A broad RDS(on) portfolio from 30 mΩ up to 350 mΩ enables top efficiency in a wide power range of industrial power supplies, chargers, as well as various ampere ratings in servo drives.
CoolSiC™ trench MOSFET technology is optimized to combine performance with reliability in operation, complemented by a 3 µs short-circuit withstand time. Thanks to .XT interconnection technology, the thermal capabilities in a small package form factor are significantly improved. .XT technology allows 30% extra loss to be dissipated through the chip-package interconnection, compared to standard packages. The new CoolSiC™ .XT portfolio shows best-in-class thermal performance and cycling capabilities: up to 14% higher output current, or doubled switching frequency, or 10-15°C lower operating temperatures compared to standard interconnection.
Discover the multiple ways of improving application performance with this SMD portfolio: passive cooling solutions, increased power density, longer lifetimes, and more.
Summary of Features
- Very low switching losses
- Short-circuit withstand time, 3 µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- 1200 V optimized SMD package with creepage and clearance distances, > 6.1 mm on PCB
- Sense pin for optimized switching performance
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system complexity and cost
- SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
Potential Applications
- Drives
- Infrastructure - Charger
- Energy generation – Solar string inverter and solar optimizer
- Industrial power supplies – Industrial UPS
Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Hex Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
18
Maximum Continuous Drain Current (A)
56
Maximum Drain-Source Resistance (mOhm)
41@18V
Typical Gate Charge @ Vgs (nC)
63@18V
Typical Gate to Drain Charge (nC)
15
Typical Input Capacitance @ Vds (pF)
2290@800V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
11
Typical Rise Time (ns)
14
Typical Turn-Off Delay Time (ns)
25
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
4.4
Package Width
9.25
Package Length
10
PCB changed
7
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-263
Pin Count
8