Módulos IGBT

FS100R12W2T7B11BOMA1

Trans IGBT Module N-CH 1200V 100A 20W 33-Pin Tray

Infineon Technologies AG

Especificaciones técnicas del producto

• RoHS (Unión Europea)

  Compliant with Exemption

• ECCN (Estados Unidos)

  EAR99

• Estatus de pieza

  Active

• Código HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Hex

• Typical Collector-Emitter Saturation Voltage (V)

  1.5

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  20

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  100

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  12

• Package Width

  56.7

• Package Length

  62.8

• PCB changed

  33

• Pin Count

  33