Especificaciones técnicas del producto
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
75
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
23@10V
Typical Gate Charge @ Vgs (nC)
222@10V
Typical Gate Charge @ 10V (nC)
222
Typical Gate to Drain Charge (nC)
90
Typical Gate to Source Charge (nC)
54
Typical Reverse Recovery Charge (nC)
17900
Typical Input Capacitance @ Vds (pF)
7160@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
1980@400V
Minimum Gate Threshold Voltage (V)
2.5
Typical Output Capacitance (pF)
195
Maximum Power Dissipation (mW)
595000
Typical Fall Time (ns)
29
Typical Rise Time (ns)
55
Typical Turn-Off Delay Time (ns)
140
Typical Turn-On Delay Time (ns)
45
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
19.5@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
300
Typical Gate Plateau Voltage (V)
5.2
Typical Reverse Recovery Time (ns)
600
Maximum Diode Forward Voltage (V)
1.2
Maximum Positive Gate-Source Voltage (V)
30
Mounting
Through Hole
Package Height
20.57
Package Width
4.7
Package Length
15.62
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole