IGBT Modules

APTGL475A120D3G

Trans IGBT Module N-CH 1200V 610A 2080W 7-Pin Case D-3 Box

Microchip Technology

Especificaciones técnicas del producto

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Dual

• Typical Collector-Emitter Saturation Voltage (V)

  1.8

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  2080

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  610

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Packaging

  Box

• Mounting

  Screw

• Package Height

  30

• Package Width

  62

• Package Length

  108

• PCB changed

  7

• Supplier Package

  Case D-3

• Pin Count

  7