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AONR21357|ALPHAO|simage
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MOSFETs

AONR21357

Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R

Alpha and Omega Semiconductor
Hojas de datos 

Especificaciones técnicas del producto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Código HTS
    8541.29.00.55
  • Automotive
    Unknown
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Process Technology
    TMOS
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±25
  • Maximum Continuous Drain Current (A)
    21
  • Maximum Drain-Source Resistance (mOhm)
    7.8@10V
  • Typical Gate Charge @ Vgs (nC)
    25@4.5V|50@10V
  • Typical Gate Charge @ 10V (nC)
    50
  • Typical Input Capacitance @ Vds (pF)
    2830@15V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    66
  • Typical Rise Time (ns)
    18
  • Typical Turn-Off Delay Time (ns)
    125
  • Typical Turn-On Delay Time (ns)
    12.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    6.3@10V|9.8@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.78
  • Package Width
    3
  • Package Length
    3
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    DFN-A EP
  • Pin Count
    8

Documentación y Recursos

Hojas de datos
Recursos de diseño