通用双极型晶体管

2N3020

Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 Box

Central Semiconductor

Especificaciones técnicas del producto

• 欧盟RoHS指令

  Supplier Unconfirmed

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.21.00.75

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  140

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  7

• Operating Junction Temperature (°C)

  -65 to 200

• Maximum Base-Emitter Saturation Voltage (V)

  1.1@15mA@150mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.2@15mA@150mA|0.5@50mA@500mA

• Maximum DC Collector Current (A)

  1

• Maximum Collector Cut-Off Current (nA)

  10

• Minimum DC Current Gain

  30@100uA@10V|40@10mA@10V|40@150mA@10V|30@500mA@10V|15@1A@10V

• Maximum Power Dissipation (mW)

  800

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Box

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-39

• Pin Count

  3

• Lead Shape

  Through Hole