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TTC0002Q|TOSHIBA|simage
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GP BJT

TTC0002(Q)

Trans GP BJT NPN 160V 18A 180000mW 3-Pin(3+Tab) TO-3PL

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.75
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    160
  • Maximum Collector-Emitter Voltage (V)
    160
  • Maximum Base-Emitter Voltage (V)
    5
  • Maximum Collector-Emitter Saturation Voltage (V)
    2@0.9A@9A
  • Maximum DC Collector Current (A)
    18
  • Minimum DC Current Gain
    80@1A@5V|35@9A@5V
  • Maximum Power Dissipation (mW)
    180000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    26
  • Package Width
    5
  • Package Length
    20
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-3PL
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources