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TPW1R306PLL1Q|TOSHIBA|simage
TPW1R306PLL1Q|TOSHIBA|limage
MOSFETs

TPW1R306PL,L1Q

Trans MOSFET N-CH Si 60V 260A 8-Pin DSOP Advance

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    175
  • Maximum Continuous Drain Current (A)
    260
  • Maximum Drain-Source Resistance (mOhm)
    1.29@10V
  • Typical Gate Charge @ Vgs (nC)
    91@10V
  • Typical Gate Charge @ 10V (nC)
    91
  • Typical Input Capacitance @ Vds (pF)
    6250@30V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    14.7
  • Typical Rise Time (ns)
    8.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Surface Mount
  • Package Height
    0.73 mm
  • Package Width
    5 mm
  • Package Length
    5 mm
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    DSOP Advance
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources