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TPW1R005PLL1Q|TOSHIBA|simage
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MOSFETs

TPW1R005PL,L1Q

Trans MOSFET N-CH Si 45V 300A 8-Pin DSOP Advance T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    45
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    300
  • Maximum Drain-Source Resistance (mOhm)
    0.99@10V
  • Typical Gate Charge @ Vgs (nC)
    59@4.5V|122@10V
  • Typical Gate Charge @ 10V (nC)
    122
  • Typical Input Capacitance @ Vds (pF)
    7700@22.5V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    18
  • Typical Rise Time (ns)
    17
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    0.75@10V|1.15@4.5V
  • Mounting
    Surface Mount
  • Package Height
    0.73
  • Package Width
    5
  • Package Length
    5
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    DSOP Advance
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources