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MOSFETs

TPS1100D

Trans MOSFET P-CH Si 15V 1.6A 8-Pin SOIC Tube

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    15
  • Maximum Gate-Source Voltage (V)
    2
  • Maximum Gate Threshold Voltage (V)
    1.5
  • Maximum Continuous Drain Current (A)
    1.6
  • Maximum Drain-Source Resistance (mOhm)
    400@4.5V
  • Typical Gate Charge @ Vgs (nC)
    5.45@10V
  • Typical Gate Charge @ 10V (nC)
    5.45
  • Typical Gate to Drain Charge (nC)
    1.4
  • Typical Gate to Source Charge (nC)
    0.87
  • Maximum Power Dissipation (mW)
    791
  • Typical Fall Time (ns)
    2
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    13
  • Typical Turn-On Delay Time (ns)
    4.5
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    125
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    180@10V|291@4.5V|476@3V|606@2.7V
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max) mm
  • Package Width
    3.98(Max) mm
  • Package Length
    5(Max) mm
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources