Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
36
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
29@10V
Typical Gate Charge @ Vgs (nC)
22@10V
Typical Gate Charge @ 10V (nC)
22
Typical Gate to Drain Charge (nC)
4.4
Typical Gate to Source Charge (nC)
9
Typical Switch Charge (nC)
8.2
Typical Input Capacitance @ Vds (pF)
1700@100V
Typical Reverse Transfer Capacitance @ Vds (pF)
7@100V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
180
Maximum Power Dissipation (mW)
2800
Typical Fall Time (ns)
12
Typical Rise Time (ns)
8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
24@10V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.8
Maximum Pulsed Drain Current @ TC=25°C (A)
102
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
78.1
Typical Gate Plateau Voltage (V)
60
Maximum Diode Forward Voltage (V)
1.2
Maximum Gate Resistance (Ohm)
6
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
0.95 mm
Package Width
5 mm
Package Length
5 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOP Advance
Pin Count
8
Lead Shape
No Lead