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MOSFETs

TP0610T-G

Trans MOSFET P-CH Si 60V 0.12A 3-Pin SOT-23 T/R

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.4
  • Maximum Continuous Drain Current (A)
    0.12
  • Maximum Gate-Source Leakage Current (nA)
    10
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    10000@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    10(Max)@25V
  • Minimum Gate Threshold Voltage (V)
    1
  • Typical Output Capacitance (pF)
    30(Max)
  • Maximum Power Dissipation (mW)
    360
  • Typical Fall Time (ns)
    20(Max)
  • Typical Rise Time (ns)
    15(Max)
  • Typical Turn-Off Delay Time (ns)
    15(Max)
  • Typical Turn-On Delay Time (ns)
    10(Max)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    0.4
  • Typical Reverse Recovery Time (ns)
    400
  • Maximum Diode Forward Voltage (V)
    2
  • Mounting
    Surface Mount
  • Package Height
    1.01(Max) mm
  • Package Width
    1.3 mm
  • Package Length
    2.92 mm
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources