Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Maximum Continuous Drain Current (A)
50
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
8.2@10V
Typical Gate Charge @ Vgs (nC)
14.3@4.5V|28.3@10V
Typical Gate Charge @ 10V (nC)
28.3
Typical Input Capacitance @ Vds (pF)
1990@30V
Maximum Power Dissipation (mW)
36000
Typical Fall Time (ns)
17
Typical Rise Time (ns)
5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
15 mm
Package Width
4.5 mm
Package Length
10 mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220SIS
Pin Count
3