Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
3.7
Maximum Continuous Drain Current (A)
15.8
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
190@10V
Typical Gate Charge @ Vgs (nC)
38@10V
Typical Gate Charge @ 10V (nC)
38
Typical Input Capacitance @ Vds (pF)
1350@300V
Maximum Power Dissipation (mW)
130000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Through Hole
Package Height
8.59 mm
Package Width
4.45 mm
Package Length
10.16 mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3
Lead Shape
Through Hole