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TJ40S04M3LT6L1NQ|TOSHIBA|simage
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MOSFETs

TJ40S04M3L(T6L1,NQ

Trans MOSFET P-CH Si 40V 40A 3-Pin(2+Tab) DPAK+ T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    40
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    9.1@10V
  • Typical Gate Charge @ Vgs (nC)
    83@10V
  • Typical Gate Charge @ 10V (nC)
    83
  • Typical Input Capacitance @ Vds (pF)
    4140@10V
  • Maximum Power Dissipation (mW)
    68000
  • Typical Fall Time (ns)
    150
  • Typical Rise Time (ns)
    46
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3 mm
  • Package Width
    5.5 mm
  • Package Length
    6.5 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK+
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources