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SUD19P0660GE3|VISHAY|simage
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MOSFETs

SUD19P06-60-GE3

Trans MOSFET P-CH 60V 18.3A 3-Pin(2+Tab) DPAK

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    18.3
  • Maximum Drain-Source Resistance (mOhm)
    60@10V
  • Typical Gate Charge @ Vgs (nC)
    26@10V
  • Typical Gate Charge @ 10V (nC)
    26
  • Typical Gate to Drain Charge (nC)
    7
  • Typical Gate to Source Charge (nC)
    4.5
  • Typical Input Capacitance @ Vds (pF)
    1140@25V
  • Typical Output Capacitance (pF)
    130
  • Maximum Power Dissipation (mW)
    2300
  • Typical Fall Time (ns)
    30
  • Typical Rise Time (ns)
    9
  • Typical Turn-Off Delay Time (ns)
    65
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    48@10V|61@4.5V
  • Mounting
    Surface Mount
  • Package Height
    2.39(Max)
  • Package Width
    6.22(Max)
  • Package Length
    6.73(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources