MOSFETs

STW65N65DM2AG

Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  ±25

• Maximum Gate Threshold Voltage (V)

  5

• Maximum Continuous Drain Current (A)

  60

• Maximum Gate-Source Leakage Current (nA)

  5000

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  50@10V

• Typical Gate Charge @ Vgs (nC)

  120@10V

• Typical Gate Charge @ 10V (nC)

  120

• Typical Input Capacitance @ Vds (pF)

  5500@100V

• Maximum Power Dissipation (mW)

  446000

• Typical Fall Time (ns)

  11.5

• Typical Rise Time (ns)

  13.5

• Typical Turn-Off Delay Time (ns)

  114

• Typical Turn-On Delay Time (ns)

  33

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Supplier Temperature Grade

  Automotive

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20.15(Max)

• Package Width

  5.15(Max)

• Package Length

  15.75(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole