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STL57N65M5|STMICRO|simage
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MOSFETs

STL57N65M5

Trans MOSFET N-CH Si 650V 22.5A 4-Pin Power Flat EP T/R

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    ±25
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    22.5
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    69@10V
  • Typical Gate Charge @ Vgs (nC)
    110@10V
  • Typical Gate Charge @ 10V (nC)
    110
  • Typical Input Capacitance @ Vds (pF)
    4200@100V
  • Maximum Power Dissipation (mW)
    2800
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.88 mm
  • Package Width
    8 mm
  • Package Length
    8 mm
  • PCB changed
    4
  • Supplier Package
    Power Flat EP
  • Pin Count
    4
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources